3Q Hi-Com Triac
Description
TO-220AB
BTA410Y-600CT
3Q Hi-Com Triac
9 June 2014
Product data sheet
1.
General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package.
This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber.
It is used in applications where "high junction operating temperature capability" is required.
2.
Features and benefits
• 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High Tj(max) • Isolated mounting base with 2500 V (RMS) isolation • Less sensitive gate for high noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only
3.
Applications
• Electronic thermostats (heating and cooling) • Motor Controls • Rectifier-fed DC inductive loads e.
g.
DC motors and solenoids
4.
Quick reference data
Table 1.
Symbol VDRM
ITSM
Tj IT(RMS)
Quick reference data Parameter
Conditions
repetitive peak offstate voltage
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig.
4; Fig.
5
junction temperature
RMS on-state current full sine wave; Tmb ≤ 120 °C; Fig.
1; Fig.
2; Fig.
3
Min Typ Max Unit - - 600 V
- - 100 A
- - 150 °C - - 10 A
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NXP Semiconductors
BTA410Y-600CT
3Q Hi-Com Triac
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.
1 A; T2+ G+;
Tj = 25 °C; Fig.
7
VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7
VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit
dIcom/dt
rate of change of commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; d...
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