PNP Transistor
Description
DATA SHEET
COMPOUND TRANSISTOR
FP1 SERIES
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
FEATURES • Up to 0.
7 A current drive available • On-chip bias resistor • Low power consumption during drive
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES • Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No.
C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
FP1 SERIES LISTS
Products FP1A4A FP1L2Q FP1A3M FP1F3P FP1J3P FP1L3N FP1A4M
Marking S30 S31 S32 S33 S36 S34 S35
R1 (KΩ) −
0.
47 1.
0 2.
2 3.
3 4.
7 10
R2 (KΩ) 10 4.
7 1.
0 10 10 10 10
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−25
V
Collector to emitter voltage
VCEO
−25
V
Emitter to base voltage
VEBO
−10
V
Collector current (DC)
IC(DC)
−0.
7
A
Collector current (Pulse)
IC(pulse) *
−1.
0
A
Base current (DC)
IB(DC)
−20
mA
Total power dissipation
PT
200
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50 %
The information in this document is subject to change without notice.
Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
Document No.
D16181EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan
©
21090928
FP1A4A ELECTRICAL CHARACTERISTICS (Ta = 25°C)
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