Bias Resistor Transistor
Description
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
z Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC Pc Tj Tstg
Limits −50 −50 −5 −100 200 150 −55 to +150
Unit V V V mA
mW C C
LDTA124GLT1G
3
1 2 SOT–23
1 BASE R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTA124GLT1G
Q2
- 22 3000/Tape & Reel
LDTA124GLT3G
Q2
- 22 10000/Tape & Reel
zElectrical characteristics (T 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency ∗ Transition frequency of the device.
Symbol BVCBO BVCEO BVEBO
ICBO IEBO VCE(sat) hFE R2
fT
Min.
−50 −50 −5
− −140
− 56 15.
4 −
Typ.
− − − − − − − 22
250
Max.
− − −
−0.
5 −260 −0.
3
− 28.
6
−
Unit
V V V µA µA V − kΩ MHz
Conditions
IC= −50µA IC= −1mA IE= −330µA VCB= −50V VEB= −4V IC= −10mA , IB= −0.
5mA IC= −5mA , VCE= −5V
− VCE= −10V , IE= 5mA , f= 100MHz
∗
1/3
LESHAN RADIO COMPANY, LTD.
LDTA124GLT1G
zElectrical characteristic curves
DC CURRENT GAIN : hFE COLLEC...
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