SMPS MOSFET
Description
PD- 95073A
SMPS MOSFET
IRFR3711PbF IRFU3711PbF
Applications l High Frequency Isolated DC-DC
Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on Immunity l 100% RG Tested l Lead-Free
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.
5V VGS l Fully Characterized Avalanche Voltage
and Current
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
6.
5mΩ
ID
110A
D-Pak IRFR3711
I-Pak IRFU3711
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
Gate-Source Voltage Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
gMaximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
TJ, TSTG
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJC RθJA RθJA
Parameter
hJunction-to-Case ghJunction-to-Ambient (PCB Mount) hJunction-to-Ambient
Max
20 ± 20
f100 69 f
440 2.
5 120
0.
96 -55 to +150
Typ
––– ––– –––
Max
1.
04 50 110
Units
V
A W W/°C °C
Units
°C/W
Notes through are on page 10 www.
irf.
com
1
1/7/05
IRFR/U3711PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min Typ
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient
20 ––– ––– 0.
022
RDS(on)
Static Drain-to-Source On-Resistance
––– 5.
2 ––– 6.
7
VGS(th)
Gate Threshold Voltage
1.
0 –––
––– –––
IDSS
Drain-to-Source Leakage Current
––– –––
––– –––
Gate-to-Source Forward Leakage
––– –––
IGSS
Gate-to-Source Reverse Leakage
––– –––
Max ––– ––– 6.
5 8.
5 3.
0 140 20 100 200 -200
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
emΩ VGS = 10V, ID = 15A eVGS = 4.
5V, ID = 12A
V VDS = VGS, ID = 250µA VDS = 20V, VGS = 0V
µA VDS = 16V, VGS = 0V
VDS = 16V, VGS = 0V, TJ = 125°C
nA VGS...
Similar Datasheet
