Bias Resistor Transistor - LRC
Description
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
LDTB123YET1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on / off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Supply voltage Input voltage Output current
VCC VIN IC
Power dissipation Junction temperature Storage temperature
PD Tj Tstg
Limits
−50 −12 to +5
−500 200 150 −55 to +150
3
1 2
SC-89
1 BASE
R1 R2
3 COLLECTOR
2 Unit EMITTER
V V mA
mW C C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB123YET1G
K9
2.
2 10 3000/Tape & Reel
LDTB123YET3G
K9
2.
2 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency
∗ Transition frequency of the device
Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT
Min.
− −2 − − − 56
1.
54 3.
6 −
Typ.
− −
−0.
1 − − − 2.
2 4.
5
200
Max.
−0.
3
− −0.
3 −3.
0 −0.
5
− 2.
86 5.
5
−
Unit
V
V mA µA − kΩ − MHz
Conditions VCC= −5V, IO= −100µA VO= −0.
3V, IO= −20mA IO/II= −50mA/−2.
5mA VI= −5V VCC= −50V, VI= 0V VO= −5V, IO= −50mA
− −
VCE= −10V, IE= 50mA, f= 100MHz ∗
1/3
LESHAN RADIO COMPANY, LTD.
LDTB123YET1G
zElectrical characteristic curves
INPUT VOLTAGE : VI (on) (V)
-100 VO= −0.
3V
-50
-20
-10
-5 Ta= −40°C
-2
25 °C 100 °C
-1
-500m
-200m
-100m -0.
5m -1m -2m -5m -10m -20m -50m -100m -200m -500m
OUTPUT CURRENT ...
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