Bias Resistor Transistor - LRC
Description
LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
LDTB113ZET1G
• Applications
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
• We declare that the material of product compliance with
RoHS requirements.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
Symbol
VCC VIN IC PD Tj Tstg
Limits
−50 −10 to +5
−500 200 150 −55 to +150
Unit
V V mA mW C C
3
1 2
SC-89
1 BASE
R1 R2
3 COLLECTOR
2 EMITTER
DEVICE MARKING AND RESISTOR VALUES
Device
Marking R1 (K) R2 (K)
Shipping
LDTB113ZET1G
K8
1 10 3000/Tape & Reel
LDTB113ZET3G
K8
1 10 10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Input voltage
VI(off) VI(on)
− −3
Output voltage
VO(on)
−
Input current
II −
Output current
IO(off)
−
DC current gain
GI 56
Input resistance
R1 0.
7
Resistance ratio
R2/R1
8
Transition frequency
fT
∗ Transition frequency of the device
−
Typ.
− − − − − − 1 10
200
Max.
−0.
3
− −0.
3 −7.
2 −0.
5
− 1.
3 12 −
Unit
V
V mA µA − kΩ − MHz
Conditions VCC= −5V, IO= −100µA VO= −0.
3V, IO= −20mA IO/II= −50mA/−2.
5mA VI= −5V VCC= −50V, VI=0V VO= − 5V, IO= −50mA
− − VCE= −10V, IE=50mA, f=100MHz ∗
1/3
LESHAN RADIO COMPANY, LTD.
LDTB113ZET1G
zElectrical characteristic curves
INPUT VOLTAGE : VI (on) (V)
-100 VO= −0.
3V -50
-20 -10 -5
-2 -1 -500m
Ta= −40 C 25 C
100 C
-200m
-100m -500µ -1m -2m -5m -10m -20m -50m-100m-200m -500m
OUTPUT CURRENT : IO (A)
Fig.
...
Similar Datasheet
