General Purpose Transistors NPN Silicon
Description
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
L2SC2412K*LT1
• Pb−Free Package is Available.
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3 COLLECTOR
3
MAXIMUM RATINGS
1 BASE
2 EMITTER
1 2
SOT– 23
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Collector power dissipation
PC
Junction temperature
Tj
50 V 60 V 7.
0 V 150 mAdc 0.
2 W 150 °C
Storage temperature
T stg -55 ~+150 °C
DEVICE MARKING
L2SC2412KQLT1 =BQ L2SC2412KRLT1 =BR L2SC2412KSLT1 =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
)
Characteristic
Collector–Emitter Breakdown Voltage (IC = 1 mA) Emitter–Base Breakdown Voltage (IE = 50 µA) Collector–Base Breakdown Voltage (IC = 50 µA) Collector Cutoff Current (VCB = 60 V) Emitter cutoff current (VEB = 7 V) Collector-emitter saturation voltage (IC/ IB = 50 mA / 5m A) DC current transfer ratio (V CE = 6 V, I C= 1mA) Transition frequency (V CE = 12 V, I E= – 2mA, f =30MHz ) Output capacitance (V CB = 12 V, I E= 0A, f =1MHz )
Symbol V (BR)CEO V (BR)EBO V (BR)CBO
I CBO I EBO V CE(sat) h FE
fT C ob
Min 50 7 60 — — — 120
— —
ORDERING INFORMATION
Device
Marking
Shipping
L2SC2412KQLT1 BQ 3000 Tape & Reel
L2SC2412KQLT1G BQ(Pb-Free) 3000 Tape & Reel
L2SC2412KRLT1 BR 3000 Tape & Reel
L2SC2412KRLT1G BR(Pb-Free) 3000 Tape & Reel
L2SC2412KSLT1 G1F 3000 Tape & Reel
L2SC2412KSLT1G G1F(Pb-Free) 3000 Tape & Reel
Typ Max Unit — —V — —V — —V — 0.
1 µA — 0.
1 µA — 0.
4 V –– 560 ––
180 –– MHz 2.
0 3.
5 pF
h FE values are classified as follows:
*Q
R
hFE
120~270
180~390
S 270~560
L2SC2412K*LT1-1/3
Fig.
1 Grounded emitter propagation characteristics
I C, COLLECTOR CURRENT (mA) T A = 100°C 25°C – 55°C
50
20 10 50
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5
VCE= 6 V
0.
2
0.
1 0
–0.
2 –0.
4 –0.
6 –0.
8 –1.
0 –1.
2 –1.
4 –1.
6
V BE , BASE TO EMITTER VOLTAGE(V)
Fig.
3 Grounded emitter output characteristics( )
10
I C, COLLECTOR CURRENT (mA)
8
6
4
2
0 0...
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