N-Channel MOSFET
Description
FDPF680N10T — N-Channel PowerTrench® MOSFET
November 2013
FDPF680N10T
N-Channel PowerTrench® MOSFET
100 V, 12 A, 68 mΩ
Features
• RDS(on) = 54 mΩ (Typ.
) @ VGS = 10 V, ID = 6 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low
RDS(on) • High Power and Current Handling Capability • RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications
• Consumer Appliances • LCD/LED/PDP TV • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter
D
GDS
TO-220F
G S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS VGSS
ID
IDM EAS dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage Drain Current Drain Current
- Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt Power Dissipation
(TC = 25oC) - Derate Above 25oC
(Note 1) (Note 2) (Note 3)
TJ, TSTG TL
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
FDPF680N10T 100 ±20 12 7.
6 48 50.
4 13.
0 24 0.
19
-55 to +150 300
Thermal Characteristics
Symbol
RθJC RθJA
Parameter Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FDPF680N10T 5.
2 62.
5
Unit V V A A mJ
V/ns W
W/oC oC oC
Unit oC/W
©2008 Fairchild Semiconductor Corporation FDPF680N10T Rev.
C5
1
www.
fairchildsemi.
com
FDPF680N10T — N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Part Number FDPF680N10T
Top Mark FDPF680N10T
Package TO-220F
Packing Method Tube
Reel Size N/A
Tape Width N/A
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS ΔBVDSS / ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature ...
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