N-Channel MOSFET
Description
HY1607P
N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 68V/70A
RDS(ON) = 6.
5 mΩ (typ.
) @ VGS=10V
• 100% avalanche tested
• Reliable and Rugged
• Lead Free and Green Devices Available
(RoHS Compliant)
G D S
D
Applications
• Switching application • Power Management for Inverter Systems.
G
S
N-Channel MOSFET
Ordering and Marking Information
P
HY1607
YYÿ WWJ G
Package Code
P : TO220-3L Date Code YYWW Assembly Material G : Lead Free Device
Note:
HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS.
HOOYI lead-free products meet or exceed the lead-free
requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature.
HOOYI
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in
homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
HOOYI reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
1 www.
hooyi-semi.
com
HY1607P
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
IDP 300µs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings EAS Avalanche Energy, Single Pulsed Note *VD=50V
TC=25°C
TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C
L=0.
3mH
Rating
68 25 175 -55 to 175 70
280 70 60 160 85 0.
5 62.
5
510
Unit
V °C °C A A A W °C/W
mJ
Electrical Characteristics
(T A
=
25°C
Unless
Otherwise
Noted)
Symbol
Parameter
Test Conditions
...
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