Silicon N Channel Power MOS FET
Description
RJK0651DPB
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
Preliminary Datasheet
R07DS0076EJ0200 Rev.2.00
Apr 09, 2013
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
Low on-resistance
RDS(on) = 11 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code...
Similar Datasheet