General Purpose Transistors
Description
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽComplementary to L9014.
ƽ We declare that the material of product compliance with RoHS requirements.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
L9015QLT1G
Series S-L9015QLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
L9015QLT1G S-L9015QLT1G
L9015QLT3G S-L9015QLT3G
L9015RLT1G S-L9015RLT1G
L9015RLT3G S-L9015RLT3G
L9015SLT1G S-L9015SLT1G
L9015SLT3G S-L9015SLT3G
Marking 15Q
15Q 15R
15R 15S
15S
Shipping 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel 3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current-continuoun
Symbol VCEO VCBO VEBO IC
Value -45 -50 -5 -100
Unit V V V mA
THERMAL CHARATEERISTICS
Characteristic Total Device Dissipation FR-5 Board.
(1) TA=25oC Derate above 25oC Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (2) TA=25 oC Derate above 25oC Thermal Resistance, Junction to Ambient
Junction and Storage Temperature 1.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
2.
Alumina = 0.
4 x 0.
3 x 0.
024 in.
99.
5% alumina.
Symbol PD
RJA PD
RJA TJ ,Tstg
Max
225 1.
8 556
300 2.
4 417 -55 to +150
Unit
mW mW/oC oC/W
mW mW/oC oC/W
oC
3 1
2
SOT– 23
COLLECTOR 3
1 BASE
2 EMITTER
Rev.
O 1/4
LESHAN RADIO COMPANY, LTD.
L9015QLT1G Series S-L9015QLT1G Series
ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted)
OFF CHARACTERISTICS
Characteristic Collector-Emitter Breakdown Voltage (IC=-1.
0mA) Emitter-Base Breakdown Voltage (IE=-100µA) Collector-Base Breakdown Voltage (IC=-100µA) Collector Cutoff Current (VCB=-40V) Emitter Cutoff Current (VEB=-3V)
ON CHARACTERISTICS
DC Current Gain (IC=-1mA, VCE=-5V) Collector-Emitter Saturation Voltage (IC=-100mA,IB=-5mA)
Symbol V(BR)CEO
V(BR)EBO
V(BR)CBO
I CBO I EBO
Min -45
-5 -50
-
Typ -
-
-
H FE V CE
150 -
-
NOT...
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