General Purpose Transistors
Description
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
z We declare that the material of product compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
z DEVICE MARKING AND ORDERING INFORMATION
Device
L2SA1774QT1G S-L2SA1774QT1G
L2SA1774QT3G S-L2SA1774QT3G
L2SA1774RT1G S-L2SA1774RT1G
L2SA1774RT3G S-L2SA1774RT3G
L2SA1774ST1G S-L2SA1774ST1G
Marking FQ FQ FR FR FS
Shipping 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel
L2SA1774ST3G S-L2SA1774ST3G
FS
10000/Tape&Reel
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Collector power dissipation
Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC
Limits −60 −50 −6 −0.
15
Unit V V V
A (DC)
PC 0.
15 W
Tj 150 ˚C Tstg −55~+150 ˚C
L2SA1774QT1G Series
S-L2SA1774QT1G Series
SC-89
COLLECTOR 3
1 BASE
2 EMITTER
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-base breakdown voltage BVCBO
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
Collector-emitter saturation voltage VCE(sat)
DC current transfer ratio
hFE
Transition frequency
fT
Output capacitance
Cob
Min.
−60 −50 −6
− − − 120 − −
Typ.
− − − − − − −
140 4.
0
Max.
− − −
−0.
1 −0.
1 −0.
5 560
− 5.
0
Unit V V V µA µA V −
MHz pF
Conditions IC=−50µA IC=−1µA IE=−50µA VCB=−60V VEB=−6V IC/IB=−50mA/−5mA VCE=−6V, IC=−1mA VCE=−12V, IE=2mA, f=30MHz VCB=−12V, IE=0A, f=1MHz
!hFE values are classified as follows:
Item Q
R
hFE 120~270 180~390
S 270~560
Rev.
O 1/3
COLLECTOR CURRENT : Ic (mA)
!Electrical characteristic curves
−50
Ta=100˚C −20 25˚C
−40˚C −10
VCE=−6V
−5
−2 −1 −0.
5
−0.
2 −0.
1
−0.
2 −0.
4 −0.
6 −0.
8 −1.
0 −1.
2 −1.
4 −1.
6 BASE TO EMITTER VOLTAGE : VBE (V)
Fig.
1 Grounded emitter prop...
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