18V/1A PNP with N-MOSFET CHARGE IC
Description
BL8595
18V/1A PNP with N-MOSFET CHARGE IC
DESCRIPTION
BL8595 is designed for battery charging controller with patent BICMOS process, which features PNP characteristics and a NMOS for base current blocking.
Such base current blocking feature cut off the base current of PNP transistor when source current of NMOS is removed, or the gate voltage indicating the NMOS off.
FEATURES
Range of operation input voltage: Max 18V Charging current up to 1A Operation dropout voltage:0.
3V@500mA High isolating N-MOSFET Package type:SOT23-6 Environment Temperature: -20C~85C
BL8595 is also suitable for high side switch in a system with multi power supplies, when isolating different power supplies becomes essential.
APPLICATIONS
Cell phone and other portable device
BL8595 can block reverse voltage as high as 10V.
So it is safe enough for mobile phone system or other portable device powered by 1 cell Li-ion battery.
BL8595 is available in SOT23-6L.
ORDERING INFORMATION BL8595 □1 □2 □3
Code
Description
□1
Temperature&Rohs: C:-40~85C ,Pb Free Rohs Std.
□2
Package type: B6:SOT-23-6
□3
Packing type: TR:Tape&Reel (Standard)
MARKING
PIN CONFIGURATION
BL8595CB6TR (SOT23-6)
1
2
Symbol
CHR C
3B
4E 5C 6 GATDV
Description
NMOS Gate PNP Collect PNP Base (NMOS Drain) PNP Emit PNP Collect
NMOS Source
Notice: YW means the year and week parts being manufactured, subjected to change.
OC is the code of the product, it will not be changed on any part.
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FUNCTION DIAGRAM
BL8595
TYPICAL APPLICATION CIRCUIT
BL8595
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BL8595
ABSOLUTE MAXIMUM RATING
Parameter
Collector-base Voltage(IE=0) (PNP) Collector-emitter Voltage(IB=0) (PNP) Emitter-base Voltage(IC=0) (PNP) Collector Current (PNP) Base Current (PNP) Forward Voltage(Source-Drain) (MOSFET) Gate-Source Voltage (MOSFET) Source Current (MOSFET) Maximum Power Dissipation Operating Junction Temperature Range
Storage Temperature Range Soldering Recommendations (Peak Temperature...
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