N-Channel MOSFET
Description
TPCM8001-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCM8001-H
High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications
0.
5±0.
1
Unit: mm
0.
8 8
0.
25±0.
05
0.
05 M A 5
4.
65±0.
3 3.
65±0.
2
• Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 6.
0 nC (typ.
) • Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.
) • High forward transfer admittance: |Yfs| =36 S (typ.
) • Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.
1 to 2.
3 V (VDS = 10 V, ID = 1 mA)
0.
75±0.
05
0.
2＋－00.
2
0.
166±0.
05
14 3.
5±0.
2
0.
55 A
0.
05 S
S1
4
1.
05± 0 .
2
0.
6±0.
1
2.
2±0.
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage
Drain current
DC (Note 1) Pulsed (Note 1)
Drain power dissipation (Tc=25°C)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
Single-pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Tc=25°C) (Note 4)
Channel temperature
Storage temperature range
Symbol VDSS VDGR VGSS
ID IDP PD
PD
PD
EAS
IAR
EAR
Tch Tstg
Rating 30 30 ±20 20 60 30
2.
3
1.
0
104
20 1.
8
150 −55 to 150
Unit V V V A W W
W
mJ A mJ °C °C
2.
75±0.
2
8
1,2,3：SOURCE 5,6,7,8：DRAIN
0.
8±0.
1 5
4：GATE
JEDEC
―
JEITA
―
TOSHIBA
2-4L1A
Weight: 0.
028 g (typ.
)
Circuit Configuration
8765
1234
Note: For Notes 1 to 4, refer to the next page.
Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Preca...
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