INSULATED GATE BIPOLAR TRANSISTOR
Description
PD- 95188A
IRG4PH40UDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE Features
C
UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry standard TO-247AC package Lead-Free
Benefits
Higher switching frequency capability than competitive IGBTs
Highest efficiency available HEXFRED diodes optimized for performance with
IGBT's .
Minimized recovery characteristics require less/no snubbing
G
E
n-channel
VCES = 1200V VCE(on) typ.
= 2.
43V @VGE = 15V, IC = 21A
TO-247AC
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Thermal Resistance
RθJC RθJC RθCS RθJA Wt
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irf.
com
Parameter Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Max.
1200 41 21 82 82 8.
0 130 ± 20 160 65 -55 to + 150
300 (0.
063 in.
(1.
6mm) from case ) 10 lbfin (1.
1Nm)
Units V
A
V W °C
Min.
Typ.
0.
24 6 (0.
21)
Max.
0.
77 1.
7 40
Units
°C/W
g (oz)
1
05/27/11
IRG4PH40UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
V(BR)CES Collector-to-Emitter Breakdown Volta...
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