EPITAXIAL PLANAR NPN TRANSISTOR
Description
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION SWITCHING APPLICATION.
FEATURES ᴌHigh DC Current Gain : hFE=70~700. ᴌExcellent hFE Linearity
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTA1267.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage Collector-Emitter Voltage Emitter-Bas...
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