SILICON DIFFUSED TYPE ZENER DIODE
Description
1ZB6.
8~1ZB390
TOSHIBA ZENER DIODE SILICON DIFFUSED TYPE
1ZB6.
8~1ZB390
CONSTANT VOLTAGE REGULATION TRANSIENT SUPPRESSORS
Unit: mm
l Average Power Dissipation l Peak Reverse Power Dissipation l Zener Voltage l Tolerance of Zener Voltage l Plastic Mold Package
: P = 1.
0W : PRSM = 200W at tw = 200µs : VZ = 6.
8~390V : ±10%
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
P Tj Tstg
RATING
1.
0 −40~150 −40~150
UNIT
W °C °C
MARK
JEDEC JEITA TOSHIBA
Weight: 0.
18g
― ― 3−3F2A
1 2001-07-09
1ZB6.
8~1ZB390
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
TYPE
1ZB6.
8 1ZB7.
5 1ZB8.
2 1ZB9.
1 1ZB10 1ZB11 1ZB12 1ZB13 1ZB15 1ZB16 1ZB18 1ZB20 1ZB22 1ZB24 1ZB27 1ZB30 1ZB33 1ZB36 1ZB43 1ZB47 1ZB51 1ZB68 1ZB75 1ZB82 1ZB100 1ZB110 1ZB150 1ZB180 1ZB200 1ZB200−Y 1ZB200−Z 1ZB220 1ZB220−Y 1ZB220−Z
ZENER CHARACTERISTICS
ZENER VOLTAGE VZ (V)
MIN TYP.
MAX
ZENER IMPEDANCE
rd (Ω)
MAX
MEASURE− MENT
CURRENT IZ (mA)
6.
2 6.
8 7.
4
60
10
TEMPERATUR ECOEFFICIENT
OF ZENER VOLTAGE αT (mV / °C)
TYP.
MAX
34
FORWARD VOLTAGE
VF (V) MAX 1.
2
MEASURE− MENT
CURRENT IF (A)
0.
2
REVERSE CURRENT
IR (µA) MAX 10
MEASURE− MENT
VOLTAGE VR (V)
3
6.
8 7.
5 8.
3
30
10 4 5 1.
2 0.
2 10 4.
5
7.
4 8.
2 9.
1
30
10 4 6 1.
2 0.
2 10 4.
9
8.
2 9.
1 10.
1
30
10 5 8 1.
2 0.
2 10 5.
5
9.
0 10 11.
0
30
10 6 9 1.
2 0.
2 10 6
9.
9 11 12.
1
30
10 7 11 1.
2 0.
2 10 7
10.
8 12 13.
2
30
10 8 13 1.
2 0.
2 10 8
11.
7 13 14.
3
30
10 9 14 1.
2 0.
2 10 9
13.
5 15 16.
5
30
10
11 17 1.
2
0.
2
10
10
14.
4 16 17.
6
30
10
12 19 1.
2
0.
2
10
11
16.
2 18 19.
8
30
10
14 23 1.
2
0.
2
10
13
18.
0 20 22.
0
30
10
16 26 1.
2
0.
2
10
14
19.
8 22 24.
2
30
10
18 28 1.
2
0.
2
10
16
21.
6 24 26.
4
30
10
20 32 1.
2
0.
2
10
17
24.
3 27 29.
7
30
10
23 36 1.
2
0.
2
10
19
27.
0 30 33.
0
30
10
25 40 1.
2
0.
2
10
21
29.
7 33 36.
3
30
10
26 41 1.
2
0.
2
10 26.
4
32.
4 36 39.
6
30
9 28 45 1.
2 0.
2 10 28.
8
38.
7 43 47.
3
40
7 33 53 1.
2 0.
2 10 34.
4
42.
3 47 51.
7
65
6 38 60 1.
2 0.
2 1...
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