Silicon NPN POWER TRANSISTOR
Description
HG Semiconductors
HG RF POWER TRANSISTOR
2SC2290
ROHS Compliance,Silicon NPN POWER TRANSISTOR
Specified 12.5V, 28MHz Characteristics
Output Power
: Po = 60W PEP (Min.)
Power Gain
: Gp = 11.8dB (Min.)
Collector Efficiency
ηC: = 35% (Min.)
Intermodulation Distortion : IMD = 30dB (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltag...
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