2SC4667
Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4667
Ultra High Speed Switching Applications Computer, Counter Applications
2SC4667
Unit: mm
• High transition frequency: fT = 400 MHz (typ.
) • Low saturation voltage: VCE (sat) = 0.
3 V (max) • High speed switching time: tstg = 15 ns (typ.
)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 40 V
Collector-emitter voltage Emitter-base voltage Collector current Base current
VCEO VEBO
IC IB
15 V 5V 200 mA 40 mA
Collector power dissipation Junction temperature Storage temperature range
PC 100 mW
Tj 125 °C
Tstg
−55~125
°C
JEDEC JEITA
― SC-70
Note: Using continuously under heavy loads (e.
g.
the application of high
TOSHIBA
2-2E1A
temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the
Weight: 0.
006 g (typ.
)
reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01
2SC4667
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ.
Max Unit
Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance
Turn-on time Switching time Storage time
Turn-off time
ICBO
VCB = 40 V, IE = 0
⎯ ⎯ 0.
1 μA
IEBO
VEB = 5 V, IC = 0
⎯ ⎯ 0.
1 μA
hFE (1) (Note 1)
VCE = 1 V, IC = 10 mA
40 ⎯ 240
hFE (2) VCE (sat) VBE (sat)
VCE = 1 V, IC = 100 mA IC = 20 mA, IB = 1 mA IC = 20 mA, IB = 1 mA
20 ⎯ ⎯ ⎯ ⎯ 0.
3 V ⎯ ⎯ 1.
0 V
fT VCE = 10 V, IC = 10 mA
200 400 ⎯ MHz
Cob VCB = 1...
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