2SC3645
Description
Ordering number:ENN1720A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1415/2SC3645
High-Voltage Switching, Predriver Applications
Features
· Adoption of FBET process.
· High breakdown voltage (VCEO=160V).
· Excellent linearity of hFE and small Cob.
· Fast switching speed.
· Ultrasmall size marking it easy to provide high-
density, small-sized hybrid ICs.
Package Dimensions
unit:mm 2038A
[2SA1415/2SC3645]
4.
5 1.
6 1.
5
1.
0 2.
5 4.
25max
( ) : 2SA1415
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse)
Collector Dissipation
Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC1 PC2 Tj
Tstg
Electrical Characteristics at Ta = 25˚C
0.
4 0.
5
32 1.
5 3.
0
1
0.
75
Conditions
Moutned on ceramic board (250mm2×0.
8mm)
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)80V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)5V, IC=(–)10mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)10mA
* : The 2SA1415/2SC3645 are classified by 10mA hFE as follows :
Rank
R
S
T
hFE 100 to 200 140 S 280 200 to 400
Marking 2SA1415 : AA 2SC3645 : CA
hFE rank : R, S, T
0.
4
1 : Base 2 : Collector 3 : Emitter SANYO : PCP
Ratings (–)180 (–)160 (–)5 (–)140 (–)200 500 1.
3 150
–55 to +150
Unit V V V mA mA
mW W ˚C ˚C
Ratings min typ max
Unit
(–)100 nA
(–)100 nA
100*
400*
150 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
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