2SA1331
Description
Ordering number:EN3217
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1331/2SC3361
High-Speed Switching Applications
Features
· Fast switching speed.
· High breakdown voltage.
· Small-sized package permitting the 2SA1331/
2SC3361-applied sets to be made small and slim.
Switching Time Test Circuit
Package Dimensions
unit:mm 2018A
[2SA1331/2SC3361]
( ) : 2SA1331
(For PNP, the polarity is reversed) Unit (resistance : Ω, capacitance : F)
Specifications
C : Collector B : Base E : Emitter
SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature
VCBO VCEO VEBO
IC ICP IB PC Tj
Tstg
(–)60 (–)50
(–)5 (–)150 (–)400
(–)40 150 125
–55 to +125
V V V mA mA mA mW ˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Common Base Output Capacitance
ICBO IEBO hFE
fT Cob
VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)6V, IC=(–)1mA VCE=(–)6V, IC=(–)1mA VCB=(–)6V, f=1MHz
Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Delay Time Rise Time
VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO
td tr
IC=(–)10mA, IB=(–)1mA IC=(–)10mA, IB=(–)1mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 See specified Test Circuit
See specified Test Circuit
Storage Time
tstg See specified Test Circuit
Fall Time
tf See specified Test Circuit
* : The 2SA1331/2SC3361 are classified by 1mA hFE as follows :
90 4 180 135 5 270 200 6 400
Marking 2SA1331 : O, 2SC3361 : S hFE rank : 4, 5, 6
Ratings min typ
90* 100 (3.
5) 2.
7
(–)0.
1 (–)0.
75 (–)60 (–)50 (–)5
40 (120)
80 (190)
230 (200)
160
max (–)0.
1 (–)0.
1 400*
(–)0.
4 (–)1.
1
...
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