N-Channel Super Junction Power MOSFET
Description
NCE08N50I,NCE08N50K
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge.
This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant
TVDS@ jmax
RDS(ON) ID
560 600 7.
8
V mΩ A
Application
● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE08N50I
TO-251
NCE08N50I
NCE08N50K
TO-252
NCE08N50K
Table 1.
Absolute Maximum Ratings (TC=25℃) Parameter
Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 400 V, ID = 7.
8 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note 2) Avalanche current(Note 1)
Symbol VDS VGS ID (DC) ID (DC)
IDM (pluse)
dv/dt
PD
EAS IAR
TO-251
Value
500 ±30 7.
8
5 23.
4
50
83 0.
67 230 7.
8
TO-252
Unit
V V A A A
V/ns
W W/°C
mJ
A
Wuxi NCE Power Semiconductor Co.
, Ltd
Page 1
http://www.
ncepower.
com
v1.
2
NCE08N50I,NCE08N50K
Parameter Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Table 2.
Thermal Characteristic Parameter
Thermal Resistance，Junction-to-Case（Maximum） Thermal Resistance，Junction-to-Ambient （Maximum）
Symbol EAR
TJ,TSTG
Symbol
RthJC RthJA
Value
0.
5 -55.
.
.
+150
Value
1.
5 75
Unit mJ
°C
Unit
°C /W °C /W
Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
C...
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