N-Channel Super Junction Power MOSFET
Description
NCE05N50L
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge.
This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant
VDS @Tjmax RDS(ON) ID
560 900
5
V mΩ A
Application
● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE05N50L
TO-251S
NCE05N50
Table 1.
Absolute Maximum Ratings (TC=25℃)
Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 400 V, ID = 5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note2) Avalanche current(Note 1)
Symbol VDS VGS ID (DC) ID (DC)
IDM (pluse)
dv/dt
PD
EAS IAR
TO-251S
NCE05N50L
500 ±30
5 3 15
50
50 0.
4 130 5
Wuxi NCE Power Semiconductor Co.
, Ltd
Page 1
http://www.
ncepower.
com
Unit
V V A A A
V/ns
W W/°C
mJ
A
v1.
2
NCE05N50L
Parameter Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
Operating Junction and Storage Temperature Range
Table 2.
Thermal Characteristic Parameter
Thermal Resistance，Junction-to-Case（Maximum） Thermal Resistance，Junction-to-Ambient （Maximum）
Symbol EAR
TJ,TSTG
Symbol
RthJC RthJA
Value
0.
4 -55.
.
.
+150
NCE05N60L
2.
5 75
Unit mJ
°C
Unit
°C /W °C /W
Table 3.
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Dra...
Similar Datasheet
