N-Channel Super Junction Power MOSFET
Description
NCE08N50D,NCE08N50,NCE08N50F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge.
This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant
VDS@Tjmax RDS(ON) ID
560 600 7.
8
V mΩ A
Application
● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE08N50D
TO-263
NCE08N50D
NCE08N50
TO-220
NCE08N50
NCE08N50F
TO-220F
NCE08N50F
TO-263
TO-220
TO-220F
Table 1.
Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Drain Source voltage slope, VDS = 400 V, ID = 7.
8 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note 2) Avalanche current(Note 1)
VDS VGS ID (DC) ID (DC) IDM (pluse)
dv/dt
PD
EAS IAR
NCE08N50D NCE08N50
NCE08N50F
500
±30
7.
8 7.
8*
5 5*
23.
4 23.
4*
50
83 32 0.
67 0.
26
230 7.
8
Unit
V V A A A
V/ns
W W/°C
mJ
A
Wuxi NCE Power Semiconductor Co.
, Ltd
Page 1
http://www.
ncepower.
com
v1.
2
NCE08N50D,NCE08N50,NCE08N50F
Parameter
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
Symbol EAR
NCE08N50D NCE08N50
NCE08N50F
0.
5
Unit mJ
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
TJ,TSTG
-55.
.
.
+150
°C
Table 2.
Thermal Characteristic
Parameter
Symbol
NCE08N50D NCE08N50
NCE08N50F
Unit
Thermal Resistance，Junction-to-Case（Maximu...
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