N-Channel MOSFET
Description
HFD2N70S_HFU2N70S
Dec 2009
HFD2N70S / HFU2N70S
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ = 5.
0 ȍ ID = 1.
5 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.
2 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 5.
0 ȍ (Typ.
) @VGS=10V 100% Avalanche Tested
D-PAK I-PAK
2
1 3
HFD2N70S
1
2 3
HFU2N70S
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ഒ)
– Continuous (TC = 100ഒ͚
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700 1.
5 0.
9 6.
0 ρ30 62 1.
5 3.
8 4.
5
PD
TJ, TSTG TL
Power Dissipation (TA = 25ఁ) * Power Dissipation (TC = 25ഒ͚
- Derate above 25ഒ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
2.
5 38 0.
3 -55 to +150
300
Units 9 $ $ $ 9 P$ P-
9QV : :
:ഒ ഒ
ഒ
Thermal Resistance Characteristics
Symbol RșJC RșJA
RșJA
Junction-to-Case
Parameter
Junction-to-Ambient*
Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
----
Max.
3.
3 50 110
Units ഒ:
క ΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͪ͡͡
HFD2N70S_HFU2N70S
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 ᒺ VGS = 10 V, ID = 0.
75 A
2.
0 --
Off Characteristics
BVDSS ԩBVDSS
/ԩTJ IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current,...
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