N-Channel MOSFET
Description
HFB1N70S
Dec 2012
HFB1N70S
700V N-Channel MOSFET
BVDSS = 700 V RDS(on) typ ȍ ID = 0.
3 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 3.
5 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) ȍ 7\S #9GS=10V 100% Avalanche Tested
TO-92
1 2 3
1.
Gate 2.
Drain 3.
Source D
G
S
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25ଇ)
– Continuous (TC = 100ଇ)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
700 0.
3 0.
18 1.
2 ρ30 20 0.
3 0.
3 4.
5
PD
TJ, TSTG TL
Power Dissipation (TA = 25ଇ) Power Dissipation (TL = 25ଇ)
- Derate above 25ଇ
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
0.
9 2.
5 0.
02 -55 to +150
300
Units V A A A V mJ A mJ
V/ns W W
W/
Thermal Resistance Characteristics
Symbol RșJL
RșJA
Parameter Junction-to-Lead Junction-to-Ambient
Typ.
---
Max.
50 140
Units /W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝͵ΖΔ͑ͣͣ͑͢͡
HFB1N70S
Electrical Characteristics TC=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min
On Characteristics
VGS RDS(ON)
Gate Threshold Voltage Static Drain-Source On-Resistance
VDS = VGS, ID = 250 Ꮃ͑ VGS = 10 V, ID = 0.
15 A͑
2.
0 --
Off Characteristics
BVDSS ԩBVDSS
/ԩTJ IDSS
IGSSF
IGSSR
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 Ꮃ͑ ID = 250 Ꮃ͑͝ΖΗΖΣΖΟΔΖΕ͑ΥΠͣͦఁ͑ VDS = 700 V, VGS = 0 V͑ VDS = 560 V, TC = 125ఁ͑ VGS = 30 V, VDS = 0 V
VGS = -30 V, V...
Similar Datasheet
