N-Channel MOSFET
Description
HFD2N65S_HFU2N65S
Mar 2010
HFD2N65S / HFU2N65S
650V N-Channel MOSFET
BVDSS = 650 V RDS(on) typ = 5.0 ȍ ID = 1.6 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 6.0 nC (Typ.) Extended Safe Operating...
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