N-Channel MOSFET
Description
HFB1N60
Nov 2007
HFB1N60
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 0.4 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 4.0 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ...
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