N+P PAIR ENHANCEMENT MODE MOSFET
Description
AiT Semiconductor Inc.
www.
ait-ic.
com
AM8958
MOSFET
N+P PAIR ENHANCEMENT MODE
DESCRIPTION
FEATURES
The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
This device is particularly suited for low voltage application such as notebook computer power management and other battery powered circuits, where high-side switching, low inline power loss and resistance to transient are needed.
The AM8958 is available in SOP8 Package
N-Channel 30V /6.
8A, RDS(ON) = 23mΩ(typ.
)@VGS = 10V 30V /6.
5A, RDS(ON) = 34mΩ(typ.
)@VGS = 4.
5V P-Channel -30V / -6.
5A, RDS(ON) = 35mΩ(typ.
)@VGS = -10V -30V / -4.
4A, RDS(ON) = 60mΩ(typ.
)@VGS = -4.
5V Super high density cell design for extremely low
RDS(ON) Exceptional on-resistance and Maximum DC
current capability Available in SOP8 Package
APPLICATION
ORDERING INFORMATION
Package Type
Part Number
SOP-8
AM8958M8R M8
AM8958M8VR
Note
R: Tape & Reel V: Green Package
AiT provides all Pb free products
Suffix “ V “ means Green Package
Power Management in Note book Portable Equipment Battery Powered System
P-CHANNEL MOSFET
N-Channle
P-Channle
REV1.
0
- JUL 2010 RELEASED –
-1-
AiT Semiconductor Inc.
www.
ait-ic.
com
PIN DESCRIPTION
AM8958
MOSFET
N+P PAIR ENHANCEMENT MODE
Pin #
1 2 3 4 5 6 7 8
Symbol
S1 G1 S2 G2 D2 D2 D1 D1
Top View
Source1 Gate1 Source2 Gate2 Drain2 Drain2 Drain1 Drain1
Function
REV1.
0
- JUL 2010 RELEASED –
-2-
AiT Semiconductor Inc.
www.
ait-ic.
com
AM8958
MOSFET
N+P PAIR ENHANCEMENT MODE
ABSOLUTE MAXIMUM RATINGS
TA = 25℃ Unless otherwise specified
Symbol
Parameter
Typical NP
Unit
VDSS Drain-Source Voltage
30 -30 V
VGSS Gate-Source Voltage
±20 ±20 V
ID Continuous Drain Current (TJ=150℃)
TA=25°C
6.
8 -6.
5 A
IDM Pulsed Drain Current
25 -25 A
IS Continuous Source Current (Diode Con...
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