2SB1016A
Description
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
• High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2.
0 V (max) • Complementary to 2SD1407A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−100
V
Collector-emitter voltage
VCEO
−100
V
Emitter-base voltage
VEBO −5 V
Collector current
IC −5 A
Base current
IB
−0.
5
A
Collector power dissipation (Tc = 25°C)
PC 30 W
JEDEC
―
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA TOSHIBA
― 2-10R1A
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in
Weight: 1.
7 g (typ.
)
temperature, etc.
) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report
and estimated failure rate, etc).
1 2006-11-21
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = −100 V, IE = 0
IEBO
VEB = −5 V, IC = 0
V (BR) CEO IC = −50 mA, IB = 0
hFE (1) (Note)
VCE = −5 V, IC = −1 A
hFE (2) VCE (sat)
VCE = −5 V, IC = −4 A IC = −4 A, IB = −0.
4 A
VBE VCE = −5 V, IC = −4 A
fT VCE = −5 V, IC = −1 A
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
2SB1016A
Min Typ.
Max Unit
― ― −100 μA
― ― −1 mA
−100 ―
―
V
7...
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