2SK1066
Description
Ordering number:EN2747
N-Channel Junction Silicon FET
2SK1066
High-Frequency General-Purpose Amplifier Applications
Applications
· High-frequency general-purpose amplifier.
· AM tuner RF amplifier.
· Low-noise amplifier.
Features
· Large yfs.
· Small Crss.
· Ultralow noise figure.
· Ultrasmall-sized package permitting 2SK1066-
applied sets to be made smaller and slimmer.
Package Dimensions
unit:mm 2058
[2SK1066]
0.
425
0.
3 3
0.
15 0 to 0.
1
0.
2
2.
1 1.
250
12 0.
65 0.
65
2.
0
0.
3 0.
6 0.
9
0.
425
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Drain Voltage Gate Current Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature
Symbol
VDSX VGDS
IG ID PD Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Gate-to-Drain Breakdown Voltage
V(BR)GDS IG=–10µA, VDS=0
Gate-to-Source Leakage Current
IGSS VGS=–10V, VDS=0
Zero-Gate Voltage Drain Current
IDSS VDS=5V, VGS=0
Cutoff Voltage
VGS(off) VDS=5V, ID=100µA
Forward Transfer Admittance
| yfs | VDS=5V, VGS=0, f=1kHz
* : The 2SK1066 is classified by IDSS as follows (unit : mA) :
3.
5 20 6.
0 5.
0 21 8.
5 7.
3 22 12.
0
(Note) Marking : A
IDSS rank : 20, 21, 22 • For CP package version, use the 2SK436.
1 : Source 2 : Drain 3 : Gate SANYO : MCP
Ratings 15
–15 10 20
150 150 –55 to +150
Unit V V mA mA
mW ˚C ˚C
Ratings min typ max
Unit
–15 V
–1.
0 nA
3.
5* 12.
0* mA
–0.
2 –0.
5 –1.
5 V
10 17
mS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no re...
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