Power-Transistor
Description
SIPMOS Power-Transistor
Feature • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated
• Green Package (lead free)
P-TO262-3-1
IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16
P-TO263-3-2
Product Summary
VDS 100 V
RDS(on)
16 mΩ
ID 70 A
P-TO220-3-1
2
P-TO220-3-1
23 1
Type IPP70N10SL-16 IPB70N10SL-16 IPI70N10SL-16
Package PG-TO220-3-1 PG-TO263-3-2 PG-TO262-3-1
Ordering Code SP0002-25708 SP0002-25700 SP000225705
Marking N10L16 N10L16 N10L-16
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TC=25°C TC=100°C
Pulsed drain current
TC=25°C
Avalanche energy, single pulse
ID=70 A , VDD=25V, RGS=25Ω
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
ID puls
EAS
EAR dv/dt
IS=70A, VDS=0V, di/dt=200A/µs
Gate source voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
VGS Ptot
Tj , Tstg
Page 1
Value
70 50 280
Unit A
700 mJ
25 6 kV/µs
±20 V 250 W
-55.
.
.
+175 55/175/56
°C
2006-02-14
Thermal Characteristics Parameter
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min.
footprint @ 6 cm2 cooling area 1)
IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16
Symbol
Values
Unit
min.
typ.
max.
RthJC RthJA RthJA
- - 0.
6 K/W - - 62.
5
- - 62 - - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS 100
VGS=0V, ID=2mA
Gate threshold voltage, VGS = VDS
VGS(th)
1.
2
ID = 2 mA
Zero gate voltage drain current
VDS=100V, VGS=0V, Tj=25°C VDS=100V, VGS=0V, Tj=150°C
Gate-source leakage current
IDSS IGSS
-
VGS=20V, VDS=0V
Drain-source on-state resistance
RDS(on)
-
VGS=4.
5V, ID=50A
Drain-source on-state resistance
RDS(on)
-
VGS=10V, ID =50A
Values typ.
-
1.
6
0.
1 10
14
10
max.
2
1 100 100 25 16
Unit V
µA nA...
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