2SD2562
Description
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD2562
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min) ·High DC Current Gain-
: hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ (IC= 10A, IB=B 10mA) ·Complement to Type 2SB1649
APPLICATIONS
·...
Similar Datasheet