N-CHANNEL MOSFET
Description
N R N-CHANNEL MOSFET
JCS5N50VT/RT/CT/FT
MAIN CHARACTERISTICS
Package
ID 5 A
VDSS
500 V
Rdson(@Vgs=10V) 1.
6Ω
Qg 15 nC
z z z UPS
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge z UPS
z z Crss ( 16pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 16pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
Marking
JCS5N50VT-O-V-N-B JCS5N50RT-O-R-N-B JCS5N50CT-O-C-N-B JCS5N50FT-O-F-N-B
JCS5N50VT JCS5N50RT JCS5N50CT JCS5N50FT
Package
IPAK DPAK TO-220C TO-220MF
Halogen
Free NO NO NO NO
Packaging
Tube Tube Tube Tube
Device Weight 0.
35 g(typ) 0.
30 g(typ) 2.
15 g(typ) 2.
20 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
Parameter
- Drain-Source Voltage
Symbol
JCS5N50VT/RT
Value JCS5N50CT
VDSS
500
Drain Current -continuous
( 1)
ID T=25℃ T=100℃
5 3.
16
Drain Current - pulse (note 1)
Gate-Source Voltage ( 2)
IDM VGSS
20 ±30
Single Pulsed Avalanche Energy(note 2) ( 1) Avalanche Current(note 1) ( 1)
EAS IAR
305 5
Repetitive Avalanche Current (note 1)
EAR
10.
1
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
4.
5
Power Dissipation
PD TC=25℃ -Derate
above 25℃
91 0.
73
101 0.
81
Operating and Storage Temperature Range
TJ,TSTG
-55~+150
Maximum Lead Temperature for Soldering Purposes
*
TL
300
*Drain current limited by maximum junction temperature
JCS5N50FT 500 5* 3.
16* 20*
41 0.
33
Unit V A A A V mJ A mJ
V/ns W
W/℃
℃
℃
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ELECTRICAL CHARACTERISTICS
JCS5N50VT/RT/CT/FT
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
- Drain-Source Voltage
BVDSS
ID=250μA, VGS=0V
500 - - V
Breakdown Voltage Temperature Coefficient
ΔBVDSS/Δ ID=250μA, referenced to TJ 25℃
- 0.
64 - V/℃
Zero Gate Voltage Drain Current
Gate-body leakage current, forward
IDSS IGSSF
VDS=500V,VGS=0V, TC=25℃ VDS=400V, TC=125℃
VDS=...
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