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SC212KSIT

SEC

High Voltage Isolation Current Sensor


SC212KSIT
SC212KSIT

PDF File SC212KSIT PDF File


Description
SC212KSIT 120 kHz Bandwidth, High Voltage Isolation Current Sensor with Integrated Overcurrent Detection Features and Benefits 1.
Industry-leading noise performance with greatly improved bandwidth through proprietary amplifier and filter design techniques 2.
Small footprint package suitable for space-constrained applications 3.
1 mΩ primary conductor resistance for low power loss 4.
High isolation voltage, suitable for line-powered applications 5.
User-adjustable Overcurrent Fault level 6.
Overcurrent Fault signal typically responds to an overcurrent condition in < 2 μs 7.
Integrated shield virtually eliminates capacitive coupling from current conductor to die due to high dV/dt voltage transients 8.
Filter pin capacitor improves resolution in low bandwidth applications 9.
3 to 5.
5 V, single supply operation 10.
Factory trimmed sensitivity and quiescent output voltage 11.
Chopper stabilization results in extremely stable quiescent output voltage 12.
Ratiometric output from supply voltage Package: 16-pin SOIC Hall Effect IC Package (suffix SI) Typical Application Circuit 1/13 SC212KSIT 120 kHz Bandwidth, High Voltage Isolation Current Sensor with Integrated Overcurrent Detection General Description The SEC™ SC212KSIT current sensor provides economical and precise means for current sensing applications in industrial, commercial, and communications systems.
The device is offered in a small footprint surface mount package that allows easy implementation in customer applications.
The SC212KSIT consists of a precision linear Hall sensor integrated circuit with a copper conduction path located near the surface of the silicon die.
Applied current flows through the copper conduction path, and the analog output voltage from the Hall sensor linearly tracks the magnetic field generated by the applied current.
The accuracy of the SC212KSIT is maximized with this patented packaging configuration because the Hall element is situated in extremely close proximity to the current to b...



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