IGBT
Description
www.
vishay.
com
VS-GA200SA60UP
Vishay Semiconductors
Insulated Gate Bipolar Transistor (Ultrafast Speed IGBT), 100 A
SOT-227
PRIMARY CHARACTERISTICS
VCES VCE(on) (typical)
VGE IC Speed
600 V 1.
92 V 15 V 100 A 8 kHz to 30 kHz
Package
SOT-227
Circuit configuration
Single switch no diode
FEATURES • Ultrafast: optimized for minimum saturation
voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses • Fully isolate package (2500 VAC/RMS) • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Designed and qualified for industrial level • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912
BENEFITS • Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating • Lower overall losses available at frequencies = 20 kHz • Easy to assemble and parallel • Direct mounting to heatsink • Lower EMI, requires less snubbing • Plug-in compatible with other SOT-227 packages
ABSOLUTE MAXIMUM RATINGS
PARAMETER Collector to emitter breakdown voltage
Continuous collector current
Pulsed collector current Clamped inductive load current Gate to emitter voltage Reverse voltage avalanche energy RMS isolation voltage
Maximum power dissipation
Operating junction and storage temperature range Mounting torque
SYMBOL VCES IC ICM ILM VGE EARV VISOL PD
TJ, TStg
TEST CONDITIONS
MAX.
600
TC = 25 °C TC = 100 °C
200 100 400
VCC = 80 % (VCES), VGE = 20 V, L = 10 μH, Rg = 2.
0 , see fig.
13a
400 ± 20
Repetitive rating; pulse width limited by maximum junction temperature
160
Any terminal to case, t = 1 min
2500
TC = 25 °C TC = 100 °C
500 200 -55 to +150
6-32 or M3 screw
1.
3 (12)
UNITS V
A
V mJ V W °C Nm (lbf.
in)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction and storage temperature range Thermal resistance, junction to case Thermal resistance case to he...
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