2SB1241
Description
Transistors
2SB1260 / 2SB1181 / 2SB1241
Power Transistor (−80V, −1A)
2SB1260 / 2SB1181 / 2SB1241
5.5−+00..13 1.5±0.3 0.9 1.5
2.5 9.5±0.5
!Features 1) High breakdown voltage and high
current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1863 / 2SD1733.
!Structure Epitaxial planar type PNP silicon transistor
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