DC-DC Converter Applications
Description
Ordering number:EN4895
FX855
MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type composed of a ow ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward -voltage Schottky barrier diode.
Facilitates highdensity mounting.
· The FX855 is formed with 2 chips, one being equivalent to the 2SK1470 and the other the SB0509, placed in one package.
Package Dimensions
unit:mm 2119
[FX855]
Electrical Connection
1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain (Top view)
1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain SANYO:XP6 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 90 95 500 10 –55 to +125 –55 to +125 V V mA A ˚C ˚C VDSS VGSS ID IDP PD PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (750mm2×0.
8mm) 60 ±15 2 8 6 1.
5 150 –55 to +150 V V A A W W ˚C ˚C Symbol Conditions Ratings Unit
· Marking:855
Continued on next page.
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095TS (KOTO) TA-0115 No.
4895-1/4
FX855
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
Parameter [MOSFET] D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forwar...
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