DC-DC Converter Applications
Description
Ordering number:EN4893
FX853
MOSFET:N-Channel Silicon MOSFET SBD:Schottky Barrier Diode
DC-DC Converter Applications
Features
· Composite type composed of a low ON-resistance Nchannel MOSFET for ultrahigh-speed switching and low-voltage driving and a fast-recovery, low forward -voltage Schottky barrier diode.
Facilitates highdensity mounting.
· The FX853 is formed with 2 chips, one being equivalent to the 2SK1467 and the other the SB05-05P, placed in one package.
Package Dimensions
unit:mm 2119
[FX853]
Electrical Connection
1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain (Top view)
1:Gate 2:Source 3:No connection 4:Anode 5:Cathode 6:Drain SANYO:XP6 (Bottom view)
Specifications
Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage
Absolute Maximum Ratings at Ta = 25˚C
Symbol VDSS VGSS ID IDP PD PD Tch Tstg VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle PW≤10µs, duty cycle≤1% Tc=25˚C Mounted on ceramic board (750mm2×0.
8mm) Conditions Ratings 30 ±15 2 8 6 1.
5 150 –55 to +150 50 55 500 5 –55 to +125 –55 to +150 Unit V V A A W W ˚C ˚C V V mA A ˚C ˚C
Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature
· Marking:853
Continued on next page.
SANYO Electric Co.
,Ltd.
Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg.
, 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/71095TS (KOTO) TA-0118 No.
4893-1/4
FX853
Continued from preceding page.
Electrical Characteristics at Ta = 25˚C
Parameter [MOSFET] D-S Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source ON-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode F...
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