Power MOSFET
Description
PD - 97002A
Applications
l High frequency DC-DC converters l Plasma Display Panel
Benefits
l Low Gate-to-Drain Charge to Reduce\ Switching Losses
l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
Note AN1001)
l Fully Characterized Avalanche Voltage and Current
l Lead-Free
IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF
HEXFET® Power MOSFET
Key Parameters
VDS VDS (Avalanche) min.
RDS(ON) max @ 10V TJ max
150 200 32 175
V
V
m:
°C
TO-220AB IRFB52N15DPbF
D2Pak
TO-262
IRFS52N15DPbF IRFSL52N15DPbF
Absolute Maximum Ratings
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
VGS dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage
Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Thermal Resistance
Max.
51* 36* 240 3.
8 230* 1.
5* ± 30 5.
5 -55 to + 175
300 (1.
6mm from case ) 10 lbf•in (1.
1N•m)
Units
A
W
W/°C V
V/ns
°C
RθJC RθCS RθJA RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient
Typ.
––– 0.
50 ––– –––
Max.
0.
47* –––
62 40
Units °C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.
65°C/W.
This is the maximum measured value after 1000 temperature cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes through are on page 11
www.
irf.
com
1
09/22/10
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
150 ––– –––
3.
0 ––– –––
––– ––– 0.
16 ––– ––– 32 ––– 5.
0 ––– 25 ––– 250
I...
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