Fast Recovery Epitaxial Diode
Description
ECO-PACTM 2
Fast Recovery Epitaxial Diode (FRED)
PSEI 2x101
Preliminary Data Sheet
AC-1
IK-10
IFAVM VRRM trr
= 2x 91 A = 1200 V = 40 ns
VRSM VRRM (V) (V)
Type
1200 1200 PSEI 2x101/12
LN-9
VX-18
Symbol IFRMS IFAVM* IFRM IFSM
∫ i2 dt
TVJ TVJM Tstg VISOL
Md Weight
Test Conditions
Maximum Ratings
TVJ = TVJM TC = 50 °C, rectangular, d=0.
5
130 91
tP<10µs; rep.
rating, pulse widthlimited by TVJM TBD
TVJ = 45 °C t = 10 ms (50 Hz), sine
VR = 0
t = 8.
3 ms (60 Hz), sine
900 970
TVJ = 125 °C t = 10 ms (50 Hz), sine
VR = 0
t = 8.
3 ms (60 Hz), sine
810 870
TVJ = 45 °C t = 10 ms (50 Hz), sine
VR = 0
t = 8.
3 ms (60 Hz), sine
4100 4000
TVJ = 125 °C t = 10 ms (50 Hz), sine
VR = 0
t = 8.
3 ms (60 Hz), sine
3300 3200
-40.
.
.
+ 150
150
A A A A A A A A²s A²s A²s A²s °C °C
-40.
.
.
+ 150
°C
50/60 Hz, RMS t = 1 min
IISOL ≤ 1 mA
t=1s
Mounting torque
(M4)
typ.
2500
3000
1.
5 - 2.
0 14 - 18
24
V∼ V∼
Nm lb.
in.
g
Symbol IR
VF VTO rT RthJC RthCH IRM
trr
ds dA a
Test Conditions
Characteristic Value
TVJ = 25°C, TVJ = 25°C, TVJ = 125°C,
VVRR==V0.
R8R.
MVRRM VR=0.
8.
VRRM
IF = 100 A, TVJ = 25 °C
For power-loss calculations only
max.
max.
max.
max.
3 1.
5 15
1.
87
1.
01
mA mA mA
V
V
6.
1 mΩ
per diode; max.
0.
5 K/W
per diode; typ.
0.
05
K/W
IF=75A; -diF/dt=200A/µs; VR=100V L≤0.
05 mH; TVJ= 100°C IF=1A; -diF/dt=400A/µs; VR=30V; TVJ= 25°C Creeping distance on surface
typ.
24 typ.
40
11.
2
A ns mm
Creeping distance in air Max.
allowable acceleration
11.
2 m m 50 m/s²
Features
• 2 independent FRED in 1 package • Isolation voltage 3000 V∼ • Planar glass passivated chips • Low forward voltage drop • Leads suitable for PC board
soldering
• Very short recovery time • Soft recovery behaviour • UL registered, E 148688
Applications
• Antiparallel diode for high frequency
switching devices
• Anti saturation diode • Snubber diode • Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and ...
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