IPDH6N03LAG
Description
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DataSheet.
co.
kr
OptiMOS®2 Power-Transistor
Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application
• N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant
IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G
Product Summary V DS R DS(on),max (SMD version) ID
25 V 6 mΩ 50 A
Type
IPDH6N03LA G
IPFH6N03LA G
IPSH6N03LA G
IPUH6N03LA G
Package Marking
PG-TO252-3-11 H6N03LA
PG-TO252-3-23 H6N03LA
PG-TO251-3-11 H6N03LA
PG-TO251-3-1 H6N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C3)
Avalanche energy, single pulse
E AS I D=50 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value 50 50 350 150
6
±20 71 -55 .
.
.
175 55/175/56
Unit A
mJ kV/µs V W °C
Rev.
1.
3
page 1
2006-05-11
Datasheet pdf - http://www.
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DataSheet.
co.
kr
IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm2 cooling area5)
-
- 2.
1 K/W - 75 - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Gate resistance Transconductance
V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=30 µA
I DSS
V DS=25 V, V GS=0 V, T j=25 °C
V DS=25 V, V GS=0 V, T j=125 °C
I GSS R DS(on)
V GS=20 V, V DS=0 V V G...
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