FQP10N60C
Description
FQP10N60C / FQPF10N60C 600V N-Channel MOSFET
FQP10N60C / FQPF10N60C
600V N-Channel MOSFET
April 2007
QFET ®
Features
• 9.
5A, 600V, RDS(on) = 0.
73Ω @VGS = 10 V • Low gate charge ( typical 44 nC) • Low Crss ( typical 18 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
D
GDS
TO-220
FQP Series
GD S
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
PD Power Dissipation (TC = 25°C) - Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
G
TO-220F
FQPF Series
S
FQP10N60C FQPF10N60C
600 9.
5 9.
5 * 5.
7 5.
7 * 38 38 *
± 30 700 9.
5 15.
6 4.
5 156 50 1.
25 0.
4 -55 to +150 300
Units
V A A A V mJ A mJ V/ns W W/°C °C °C
FQP10N60C
0.
8 0.
5 62.
5
FQPF10N60C
2.
5 -62.
5
Units
°C/W °C/W °C/W
©2007 Fairchild Semiconductor Corporation
FQP10N60C / FQPF10N60C Rev.
C
1
www.
fairchildsemi.
com
FQP10N60C / FQPF10N60C ...
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