N-Channel Power MOSFET
Description
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3984
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION The 2SK3984 is N-channel MOS Field Effect Transistor designed for high speed switching applications such as class-D amplifier.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3984-ZK
TO-252 (MP-3ZK)
FEATURES • Super low on-state resistance
RDS(on) = 71 mΩ TYP.
(VGS = 10 V, ID = 9 A) RDS(on) = 85 mΩ MAX.
(VGS = 10 V, ID = 9 A) • Low Ciss: Ciss = 750 pF TYP.
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC)
±18
A
ID(pulse)
±45
A
Total Power Dissipation (TC = 25°C)
PT1
30
W
Total Power Dissipation (TA = 25°C)
PT2
1.
0
W
Channel Temperature
Tch
150
°C
Storage Temperature Single Avalanche Energy Note2 Repetitive Avalanche Current Note3 Repetitive Avalanche Energy Note3
Tstg −55 to +150 °C
EAS
10
mJ
IAR
10
A
EAR
10
mJ
THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) Channel to Ambient Thermal Resistance Rth(ch-A)
125 4.
17
°C/W °C/W
Notes 1.
PW ≤ 10 μs, Duty Cycle ≤ 1% 2.
Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3.
Tch(peak) ≤ 150°C, RG = 25 Ω
The information in this document is subject to change without notice.
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confirm that this is the latest version.
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Document No.
D17323EJ2V0DS00 (2nd edition)
Date Published April 2006 NS CP(K)
Printed in Japan
The mark shows major revised points.
The revised points can be easily searched by copying an "" in the PDF file and specifying it in the "Find what:" field.
2004
2SK3984
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS...
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