P-Channel MOSFET
Description
+0.
040.
21 -0.
02
SOP-8
NTMS10P02R2 P-Channel MOSFET
1.
50 0.
15
1 Source 2 Source 3 Source 4 Gate
5 Drain 6 Drain 7 Drain 8 Drain
D
G S
■ Features
● VDS (V) =-20V ● ID =-10 A (VGS =-10V) ● RDS(ON) ＜ 14 mΩ (VGS =-4.
5V) ● RDS(ON) ＜ 20mΩ (VGS =-2.
5V) ● Diode Exhibits High Speed, Soft Recovery
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta = 25℃ Ta = 70℃
Maximum Operating Drain Current
Pulsed Drain Current (Note.
1)
Power Dissipation
Ta = 25℃
Maximum Operating Power Dissipation
Avalanche Energy (Note.
2)
TJ = 25°C
Thermal Resistance.
Junction- to-Ambient
Junction Temperature
Lead Temperature for Soldering Purposes
Junction Storage Temperature Range
Symbol VDS VGS
ID
IDM
PD
EAS RthJA
TJ TL Tstg
10 seconds
steady state
-20
±12
-10 -8.
8
-8 -6.
4
-5.
5 -4.
5
-50 -44
2.
5 1.
6
0.
6 0.
4 500
50 80 150
260
-55 to 150
Note.
1: Pulse Test: Pulse Width < 300us, Duty Cycle < 2%.
Note.
2: VDD=−20 V, VGS =−4.
5V, Peak IL =5A, L = 40 mH, RG = 25Ω
Unit V
A
W mJ ℃/W ℃
NTMS10P02R2 P-Channel MOSFET
■ Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge Maximum Body-Diode Continuous Current
Diode Forward Voltage
Symbol VDSS
IDSS
IGSS VGS(th)
RDS(On)
gFS Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf td(on)
tr td(off)
tf trr ta tb Qrr IS
VSD
Test Conditions ID=-250μA, VGS=0V VDS=-20V, VGS=0V, TJ=25℃ VDS=-20V, VGS=0V, TJ=70℃ VDS=0V, VGS=±12V VDS=VGS ID=-250μA VGS=-4.
5V, ID=-10A VGS=-2.
5V, ID=-8.
8A VDS=-...
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