2DD1964
Description
Power Transistors
2SD1964
Silicon NPN epitaxial planar type
For power switching
s Features
q Low collector to emitter saturation voltage VCE(sat) q Satisfactory linearity of foward current transfer ratio hFE q Large collector current IC q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
130 80 7 25 15 50 2
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A
W
˚C ˚C
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
ICBO IEBO VCEO hFE1 hFE2* hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT ton tstg tf
VCB = 100V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.
1A VCE = 2V, IC = 3A VCE = 2V, IC = 8A IC = 7A, IB = 0.
35A IC = 15A, IB = 1.
5A IC = 7A, IB = 0.
35A IC = 15A, IB = 1.
5A VCE = 10V, IC = 0.
5A, f = 1MHz
IC = 7A, IB1 = 0.
7A, IB2 = – 0.
7A, VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 90 to 180 130 to 260
14.
0±0.
5 Solder Dip 4.
0
16.
7±0.
3 7.
5±0.
2
0.
7±0.
1
10.
0±0.
2 5.
5±0.
2
Unit: mm
4.
2±0.
2 2.
7±0.
2
4.
2±0.
2
φ3.
1±0.
1
1.
3±0.
2 1.
4±0.
1
0.
8±0.
1
0.
5 +0.
2 –0.
1
2.
54±0.
25
5.
08±0.
5 123
1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a)
min typ max Unit 10 µA 50 µA
80 V 45 90 260 30
0.
5 V 1.
5 V 1.
5 V 2.
5 V 20 MHz 0.
5 µs 2.
0 µs 0.
2 µs
1
Power Transistors
Collector power dissipation PC (W)
60 (1)
50 40 30
PC — Ta
(1) TC=Ta (2) With a 100 × 100 × 2mm
Al heat sink (3) With a 50 × 50 × 2mm
Al heat sink (4) Without heat sink
(PC=2W)
20
(2) 10
(3)
(4)
0 0 20 40 60 80 ...
Similar Datasheet
