Silicon PNP Transistor
Description
Transistor
2SA1123
Silicon PNP epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SC2631
s Features
q Satisfactory foward current transfer ratio hFE collector current IC characteristics.
q High collector to emitter voltage VCEO.
q Small collector output capacitance Cob.
q Makes up a complementary pair with 2SC2631, which is opti-
mum for the pre-driver stage of a 20 to 40W output amplifier.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Ratings –150 –150 –5 –100 –50 750 150
–55 ~ +150
Unit V V V mA mA mW ˚C ˚C
13.
5±0.
5
5.
1±0.
2
5.
0±0.
2
Unit: mm 4.
0±0.
2
+0.
2
0.
45 –0.
1 1.
27
+0.
2
0.
45 –0.
1 1.
27
2.
3±0.
2
123 2.
54±0.
15
1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage
ICBO VCEO VEBO hFE* VCE(sat)
VCB = –100V, IE = 0 IC = –0.
1mA, IB = 0 IE = –10µA, IC = 0 VCE = –5V, IC = –10mA IC = –30mA, IB = –3mA
–150 –5 130
–1 µA V V
450 –1 V
Transition frequency
fT VCB = –10V, IE = 10mA, f = 200MHz
200 MHz
Collector output capacitance Noise voltage
Cob NV
VCB = –10V, IE = 0, f = 1MHz VCE = –10V, IC = –1mA, GV = 80dB Rg = 100kΩ, Function = FLAT
5 pF 150 300 mV
*hFE Rank classification
Rank
R
hFE 130 ~ 220
S 185 ~ 330
T 260 ~ 450
1
Collector power dissipation PC (W)
Transistor
PC — Ta
1.
0 0.
9 0.
8 0.
7 0.
6 0.
5 0.
4 0.
3 0.
2 0.
1
0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
–100 –30 –10
VCE(sat) — IC
IC/IB=10
–3 –1
– 0.
3 – 0.
1 – 0.
03
Ta=75˚C 25˚C
–25˚C
– 0.
01 – 0.
1 – 0.
3 –1 –3 –10...
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