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2SC4129

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor 2SC4129 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=...

INCHANGE

2SC4129 PDF File

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