Silicon PNP Transistor
Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS)
2SA1931
High-Current Switching Applications
2SA1931
Unit: mm
Low saturation voltage: VCE (sat) = −0.4 V (max) High-speed switching time: tstg = 1.0 µs (typ.) Complementary to 2SC4881
Maximum Ratings (Tc = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base...
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