NPN SILICON PLANAR TRANSISTORS
Description
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
NPN SILICON PLANAR TRANSISTORS
2N930 2N930A TO-18 Metal Can Package
Low Noise Transistors
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate Above 25ºC Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg 2N930 45 45 5 30 300 1.
72 600 3.
42 - 65 to +200 2N930A 60 60 6 UNIT V V V mA mW mW/ ºC mW mW/ ºC ºC
Rth (j-a) Rth (j-c)
583 292 2N930 >45 >45 >5 <10 <2 <10 <10 <10 <1.
0 0.
7 - 0.
9 100-300 >20 >150 <600 <600 2N930A >60 >60 >6 <2 <2 <2 <2 <2 <0.
5 0.
7 - 0.
9 >60 100-300 >30
ºC/W ºC/W UNIT V V V nA nA nA nA µA V V
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION *VCEO IC=10mA, IB=0 Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut Off Current Collector Cut Off Current Emitter Cut Off Current Collector Cut Off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain VCBO VEBO ICBO ICEO IEBO ICES *VCE (sat) *VBE (sat) hFE IC=10µA, IE=0 IE=10µA, IC=0 VCB=45V, IE=0 VCE=5V, IB=0 VEB=5V, IC=0 VCE=45V, VBE=0 VCE=45V, VBE=0, Ta=170ºC IC=10mA, IB=0.
5mA IC=10mA, IB=0.
5mA IC=1µA, VCE=5V IC=10µA, VCE=5V IC=10µA, VCE=5V, Ta= -55ºC IC=500µA, VCE=5V *IC=10mA, VCE=5V *Pulse Test: Pulse width <300µ s, Duty cycle< 2%
Continental Device India Limited
Data Sheet
Page 1 of 4
NPN SILICON PLANAR TRANSISTORS
2N930 2N930A TO-18 Metal Can Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise) DYNAMIC CHARACTERISTICS DESCRIPTION Transition frequency
SYMBOL fT
Output Capacitance
Cob
Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Noise Figure
hib hrb hfe...
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